![]() ![]() ![]() Metal contacts are also made to the source, drain, and body region. Metal is deposited on the insulator to form the ate of the device (thus, metal-oxide semiconductor). A thin (fraction of micron) layer of io 2, which is an excellent electrical insulator, is deposited between source and drain region. Two heavily doped n-type regions (ource and rain) are created in the substrate. The device is fabricated on a p-type substrate (or Body). ![]() n-channel Enhancement-Type MOFET (NMO) The physical structure of a n-channel Enhancement-Type MOFET (NMO) is shown. As transistors in these 6 FET categories behave in a very similar fashion, we will focus below on the operation of enhancement MOFETs that are the most popular. FETs in each of these three categories can be fabricated either as a n-channel device or a p-channel device. Another type of FET is the Junction Field-Effect Transistors (JFET) which is not based on metal-oxide fabrication technique. MOFET can be manufactured as enhancement-type or depletion-type MOFETs. The most widely used FETs are Metal-Oxide-emiconductor FETs (or MOFET). As such, a FET is a voltage-controlled device. 1 Field-Effect (FET) transistors References: Hayes & Horowitz (pp and ), Rizzoni (chapters 8 & 9) In a field-effect transistor (FET), the width of a conducting channel in a semiconductor and, therefore, its current-carrying capability, is varied by the application of an electric field (thus, the name field-effect transistor). ![]()
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |